SPP15N65C3HKSA1
MOSFET N-CH 650V 15A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP15N65C3HKSA1 is a 650 V N-channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 15A at 25°C (Tc) and a maximum power dissipation of 156W (Tc). With a low Rds(on) of 280mOhm at 9.4A and 10V, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 1600 pF at 25V. The SPP15N65C3HKSA1 is housed in a PG-TO220-3-1 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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