SPP15N60CFDXKSA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPP15N60CFDXKSA1, offers a 600V drain-source voltage with a continuous drain current of 13.4A at 25°C (Tc). This through-hole mounted device features a low on-resistance of 330mOhm maximum at 9.4A, 10V, and a maximum power dissipation of 156W (Tc). The device utilizes Metal Oxide technology and has a gate charge of 84nC maximum at 10V and input capacitance of 1820pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, industrial motor control, and lighting solutions. The package is PG-TO220-3-1.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 750µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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