SPP12N50C3HKSA1
MOSFET N-CH 560V 11.6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP12N50C3HKSA1 is a CoolMOS™ N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 560V. This component offers a continuous drain current (Id) of 11.6A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). The device features a low on-resistance (Rds On) of 380mOhm at 7A and 10V gate drive. With a gate charge (Qg) of 49 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V, it is suitable for demanding applications. The SPP12N50C3HKSA1 is packaged in a PG-TO220-3-1 (TO-220-3) through-hole package, operating from -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and solar inverter applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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