SPP11N60S5XKSA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPP11N60S5XKSA1, is a 600V device designed for high-efficiency power conversion applications. This TO-220 package component features a continuous drain current of 11A (Tc) and a maximum power dissipation of 125W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 380mOhm at 7A and 10V, a gate charge (Qg) of 54 nC at 10V, and input capacitance (Ciss) of 1460 pF at 25V. The device operates from -55°C to 150°C and is supplied in a PG-TO220-3-1 package. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 500µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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