SPP11N60S5HKSA1
MOSFET N-CH 650V 11A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP11N60S5HKSA1 is a 650 V N-channel power MOSFET designed for high-efficiency applications. This device features a continuous drain current capability of 11A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). The on-resistance (Rds On) is specified at a maximum of 380mOhm at 7A and 10V gate drive. Key parameters include a gate charge (Qg) of 54 nC at 10V and input capacitance (Ciss) of 1460 pF at 25V. The SPP11N60S5HKSA1 is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, solar inverters, and industrial power systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 500µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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