SPP11N60CFDHKSA1
MOSFET N-CH 600V 11A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP11N60CFDHKSA1 features an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 600V. This through-hole component, packaged in a TO-220-3, offers a continuous drain current of 11A (Tc) and a maximum power dissipation of 125W (Tc). Its Rds On is specified at 440mOhm maximum at 7A and 10V. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V. Designed for demanding applications, this MOSFET is suitable for use in power supplies, lighting, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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