SPP10N10L
MOSFET N-CH 100V 10.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP10N10L is an N-Channel SIPMOS® series power MOSFET designed for high-performance switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 10.3 A at 25°C. The Rds On is specified at a maximum of 154 mOhm at 8.1 A and 10 V gate-source voltage. With a gate charge (Qg) of 22 nC at 10 V and input capacitance (Ciss) of 444 pF at 25 V, this device offers efficient switching characteristics. The power dissipation (Pd) is rated at 50 W at 25°C. The SPP10N10L is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is utilized in industrial automation, power supply units, and motor control systems. It operates within an extended temperature range of -55°C to 175°C.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 154mOhm @ 8.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 21µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 444 pF @ 25 V |
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