SPP10N10
MOSFET N-CH 100V 10.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP10N10 is an N-Channel Power MOSFET from the SIPMOS® series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 10.3A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 170mOhm at 7.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 19.4 nC and Input Capacitance (Ciss) of 426 pF, specified at 10V and 25V respectively. The maximum power dissipation is 50W (Tc). The SPP10N10 is housed in a PG-TO220-3-1 package suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply, motor control, and industrial automation applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V |
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