SPP100N08S2L-07
MOSFET N-CH 75V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP100N08S2L-07 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) capability of 100 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 6.8 mOhm maximum at 68 A and 10 V gate-source voltage. The device is packaged in a PG-TO220-3-1 through-hole package, supporting a maximum power dissipation of 300 W (Tc). Key electrical characteristics include a gate charge (Qg) of 246 nC maximum at 10 V Vgs and input capacitance (Ciss) of 7130 pF maximum at 25 V Vds. Operating temperature ranges from -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for high-power switching applications across various industries including automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 246 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7130 pF @ 25 V |
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