SPP100N08S2-07
MOSFET N-CH 75V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-channel power MOSFET, part number SPP100N08S2-07, offers a 75V drain-to-source voltage and a continuous drain current rating of 100A at 25°C (Tc). This component features a low on-resistance (Rds On) of 7.1mOhm maximum at 66A and 10V Vgs. Designed for through-hole mounting in the PG-TO220-3-1 package, it supports a maximum power dissipation of 300W (Tc). Key electrical characteristics include a gate charge (Qg) of 200 nC maximum at 10V Vgs and input capacitance (Ciss) of 6020 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V. This device is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6020 pF @ 25 V |
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