SPP100N04S2L-03
MOSFET N-CH 40V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP100N04S2L-03 is a 40V N-Channel MOSFET designed for high-power applications. This component features a low on-resistance of 3.3 mOhm at 80A and 10V Vgs, contributing to efficient power transfer. With a continuous drain current of 100A at 25°C and a maximum power dissipation of 300W, it is suitable for demanding thermal environments. The device utilizes a PG-TO220-3-1 package for through-hole mounting. Key electrical characteristics include a gate charge of 230 nC at 10V and input capacitance of 8000 pF at 25V. This MOSFET is engineered for use in industries such as industrial power supplies, automotive systems, and electric vehicle charging infrastructure. The operating temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
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