SPP100N03S2L03
MOSFET N-CH 30V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP100N03S2L03 is an N-Channel power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 3mOhm at 80A and 10V gate-source voltage (Vgs) facilitates efficient power transfer. Key parameters include a maximum gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 8180 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Its robust characteristics make it suitable for power management, automotive, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
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