SPP100N03S2-03
MOSFET N-CH 30V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ series SPP100N03S2-03 is a 30V N-channel power MOSFET. This component features a continuous drain current (Id) of 100A at 25°C and a maximum power dissipation of 300W (Tc). It offers a low on-resistance (Rds On) of 3.3mOhm at 80A and 10V. Key electrical characteristics include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 7020 pF at 25V. The SPP100N03S2-03 is housed in a PG-TO220-3-1 package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7020 pF @ 25 V |
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