SPP08P06PHXKSA1
MOSFET P-CH 60V 8.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SPP08P06PHXKSA1 is a P-Channel SIPMOS® MOSFET designed for high-performance power switching applications. This through-hole component features a Drain to Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 8.8A at 25°C, with a maximum power dissipation of 42W. The Rds On is specified at a maximum of 300mOhm at 6.2A and 10V drive voltage. Key parameters include a Gate Charge (Qg) of 15 nC and Input Capacitance (Ciss) of 420 pF, both measured at specified voltages. The device operates within an extended temperature range of -55°C to 175°C. The TO-220-3 package provides robust thermal performance for demanding environments. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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