SPP08N80C3XK
MOSFET N-CH 800V 8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP08N80C3XK is an N-channel power MOSFET featuring an 800 V drain-source voltage. This device offers a continuous drain current capability of 8 A at 25°C (Tc) and a maximum power dissipation of 104 W (Tc). The on-resistance (Rds On) is specified at 650 mOhm under a drain current of 5.1 A and a gate-source voltage of 10 V. Key parameters include a gate charge of 60 nC (max) at 10 V and an input capacitance (Ciss) of 1100 pF (max) at 100 V. The SPP08N80C3XK is housed in a PG-TO220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply, lighting, and motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 470µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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