SPP07N60S5HKSA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPP07N60S5HKSA1, offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.3A at 25°C (Tc). This through-hole component, housed in a PG-TO220-3-1 package, features a maximum power dissipation of 83W (Tc) and a low on-resistance (Rds On) of 600mOhm at 4.6A and 10V. Key parameters include a gate charge (Qg) of 35 nC at 10V and an input capacitance (Ciss) of 970 pF at 25V. Designed for demanding applications, this MOSFET is suitable for power supply units, lighting, and industrial motor control systems. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 5.5V at 350µA.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 350µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 25 V |
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