SPP07N60S5
MOSFET N-CH 650V 7.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP07N60S5 is a 650V N-Channel Power MOSFET. This device features a low on-resistance of 600mOhm maximum at 4.6A and 10V Vgs, with a continuous drain current of 7.3A (Tc) at 25°C. The SPP07N60S5 offers a high power dissipation of 83W (Tc) and a gate charge of 35nC maximum at 10V. Input capacitance (Ciss) is 970pF maximum at 25V. Designed for through-hole mounting in a PG-TO220-3-1 package, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 350µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 25 V |
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