SPP07N60CFDHKSA1
MOSFET N-CH 650V 6.6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP07N60CFDHKSA1 is a 650V N-Channel CoolMOS™ power MOSFET. This device features a continuous drain current of 6.6A at 25°C and a maximum power dissipation of 83W. The SPP07N60CFDHKSA1 offers a low on-resistance of 700mOhm at 4.6A and 10V, with a gate charge of 47nC at 10V. Input capacitance (Ciss) is rated at 790pF. Designed for through-hole mounting in a PG-TO220-3-1 package, this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for applications in power supply design, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 300µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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