SPP07N60C3HKSA1
MOSFET N-CH 650V 7.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP07N60C3HKSA1 is an N-channel power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous Current Drain (Id) of 7.3A at 25°C (Tc). The Rds On is specified at a maximum of 600mOhm at 4.6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 27 nC at 10V and an Input Capacitance (Ciss) of 790 pF at 25V. The device offers a maximum power dissipation of 83W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). Packaged in a PG-TO220-3 through-hole configuration, this MOSFET is suitable for use in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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