SPP06N80C3XK
MOSFET N-CH 800V 6A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP06N80C3XK is an N-Channel Power MOSFET from the CoolMOS™ series. This through-hole component, housed in a PG-TO220-3 package, offers a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6 A at 25°C. The device features a maximum power dissipation of 83 W (Tc) and an Rds On of 900 mOhm at 3.8 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 41 nC at 10 V and an input capacitance (Ciss) of 785 pF at 100 V. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20 V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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