SPP06N60C3HKSA1
MOSFET N-CH 650V 6.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPP06N60C3HKSA1 is a 650V N-channel power MOSFET in a PG-TO220-3-1 package. This component offers a continuous drain current of 6.2A (Tc) and a maximum power dissipation of 74W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 650V, a maximum on-resistance (Rds On) of 750mOhm at 3.9A and 10V gate drive, and a gate charge (Qg) of 31 nC at 10V. The input capacitance (Ciss) is 620 pF at 25V. Designed for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). Its robust specifications make it suitable for applications in power supplies, industrial motor control, and lighting systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 260µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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