SPP04N80C3XK
MOSFET N-CH 800V 4A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP04N80C3XK is an 800V N-channel power MOSFET. This through-hole component, packaged in a PG-TO220-3, offers a continuous drain current of 4A at 25°C and a maximum power dissipation of 63W. Key electrical specifications include a drain-to-source voltage (Vdss) of 800V, a maximum Rds(on) of 1.3 Ohm at 2.5A and 10V, and a gate charge (Qg) of 31 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 570 pF at 100V. The operating temperature range is -55°C to 150°C. This device is suitable for applications in power supply units, server power, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
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