SPP04N60C3XKSA1
MOSFET N-CH 600V 4.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' SPP04N60C3XKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C, with a maximum power dissipation of 50W (Tc). The device offers a low on-resistance of 950mOhm maximum at 2.8A and 10V gate-source voltage. Key parameters include an input capacitance (Ciss) of 490pF maximum at 25V and a gate charge (Qg) of 25nC maximum at 10V. Designed for through-hole mounting in a PG-TO220-3 package, the SPP04N60C3XKSA1 operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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