SPP04N60C3HKSA1
MOSFET N-CH 650V 4.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP04N60C3HKSA1 is a CoolMOS™ N-Channel Power MOSFET. This through-hole component offers a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 4.5A at 25°C. The device features a maximum on-resistance (Rds On) of 950mOhm at 2.8A and 10V gate-source voltage. With a maximum power dissipation of 50W (Tc) and a gate charge (Qg) of 25 nC at 10V, it is suitable for demanding applications. Key parameters include an input capacitance (Ciss) of 490 pF at 25V and a threshold voltage (Vgs(th)) of 3.9V at 200µA. The MOSFET is housed in a PG-TO220-3-1 package. This component is utilized in power supply, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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