SPP04N50C3HKSA1
MOSFET N-CH 560V 4.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP04N50C3HKSA1 is a CoolMOS™ N-channel power MOSFET with a drain-source voltage (Vdss) of 560V. This component offers a continuous drain current (Id) of 4.5A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). The Rds On is specified at a maximum of 950mOhm at 2.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 22nC (max) at 10V and input capacitance (Ciss) of 470pF (max) at 25V. The device features a standard TO-220-3 package (PG-TO220-3-1) for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies and industrial automation.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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