SPP03N60S5HKSA1
MOSFET N-CH 600V 3.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SPP03N60S5HKSA1 is a 600V N-channel MOSFET from the CoolMOS™ series, designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 3.2A (Tc) and a maximum power dissipation of 38W (Tc). With a low Rds On of 1.4 Ohm at 2A and 10V Vgs, it minimizes conduction losses. Key parameters include a 16 nC gate charge and 420 pF input capacitance, facilitating fast switching performance. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard PG-TO220-3-1 package suitable for through-hole mounting. This MOSFET is commonly utilized in switch mode power supplies, industrial power systems, and renewable energy inverters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 135µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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