SPP02N80C3XKSA1
MOSFET N-CH 800V 2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP02N80C3XKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 2 A at 25°C. The device features a maximum on-resistance (Rds On) of 2.7 Ohms at 1.2 A and 10 V gate drive. With a gate charge (Qg) of 16 nC at 10 V and input capacitance (Ciss) of 290 pF at 100 V, it is optimized for efficient switching. The power dissipation is rated at 42 W (Tc). Housed in a PG-TO220-3 package, this through-hole mounted MOSFET is suitable for industrial power supplies, server power, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
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