SPP02N60S5HKSA1
MOSFET N-CH 600V 1.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPP02N60S5HKSA1 is a 600V N-Channel Power MOSFET. It features a continuous drain current of 1.8A (Tc) at 25°C and a maximum power dissipation of 25W (Tc). The Rds(on) is specified as 3Ohm maximum at 1.1A and 10V gate drive. Key parameters include a Vgs(th) of 5.5V (max) at 80µA and a gate charge Qg of 9.5 nC (max) at 10V. Input capacitance Ciss is 240 pF (max) at 25V. This device is housed in a TO-220-3 (PG-TO220-3-1) package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 80µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
