SPP02N60C3HKSA1
MOSFET N-CH 650V 1.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPP02N60C3HKSA1, a high-performance N-Channel MOSFET from the CoolMOS™ series. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 1.8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 3 Ohm at 1.1A and 10V gate-source voltage. With a typical gate charge (Qg) of 12.5 nC at 10V and input capacitance (Ciss) of 200 pF at 25V, this MOSFET is engineered for efficient switching. The power dissipation capability is 25W (Tc) and it is housed in a TO-220-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This device finds application in power supply units and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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