SPN04N60S5
MOSFET N-CH 600V 800MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPN04N60S5 is a 600V N-Channel CoolMOS™ MOSFET designed for surface mount applications. This component features a continuous drain current (Id) of 800mA (Ta) at 25°C and a maximum power dissipation of 1.8W (Ta). The Rds On is specified at 950mOhm maximum at 2.8A and 10V. Key parameters include a Vgs(th) of 5.5V (Max) at 200µA and a gate charge (Qg) of 17 nC @ 10 V. Input capacitance (Ciss) is a maximum of 600 pF @ 25 V, with a maximum Vgs of ±20V. The device is housed in a PG-SOT223-4 package and is supplied on tape and reel. This MOSFET is suitable for power supply applications and general-purpose switching.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 200µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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