SPN03N60C3
MOSFET N-CH 650V 700MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPN03N60C3 is a 650V N-channel power MOSFET designed for efficient switching applications. This component features a low on-resistance of 1.4 Ohm maximum at 2A and 10V, facilitating reduced conduction losses. The device offers a continuous drain current capability of 700mA at 25°C and a maximum power dissipation of 1.8W under the same conditions. Key electrical parameters include a gate charge (Qg) of 17 nC maximum at 10V and input capacitance (Ciss) of 400 pF maximum at 25V. The SPN03N60C3 is housed in a PG-SOT223-4 package, suitable for surface mounting. Its robust design with a high breakdown voltage and efficient switching characteristics makes it applicable in power supply units, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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