SPN02N60S5
MOSFET N-CH 600V 400MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SPN02N60S5 is a 600 V N-Channel Power MOSFET from the CoolMOS™ series, available in a PG-SOT223-4 package. This device features a continuous drain current of 400 mA at 25°C (Ta) and a maximum power dissipation of 1.8 W (Ta). With a low Rds On of 3 Ohm at 1.1 A and 10 V, and a gate charge of 7.4 nC at 10 V, it is suitable for applications requiring efficient switching. The input capacitance (Ciss) is a maximum of 250 pF at 25 V. This MOSFET operates across a temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for use in power supply units and various industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 5.5V @ 80µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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