SPN02N60C3
MOSFET N-CH 650V 400MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPN02N60C3 is an N-channel Power MOSFET from the CoolMOS™ series. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 400 mA at 25°C. The ON-resistance (Rds On) is specified at a maximum of 2.5 Ohms at 1.1 A and 10 V gate-source voltage. With a typical gate charge (Qg) of 13 nC at 10 V and input capacitance (Ciss) of 200 pF at 25 V, this MOSFET is suitable for applications demanding high efficiency and fast switching. It is housed in a PG-SOT223-4 package for surface mounting and offers a maximum power dissipation of 1.8 W. The operating temperature range is -55°C to 150°C. This component finds use in power supply units and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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