SPN01N60C3
MOSFET N-CH 650V 300MA SOT223-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPN01N60C3, offers 650V drain-source breakdown voltage and 300mA continuous drain current at 25°C. This surface mount device in a PG-SOT223-4 package features a maximum Rds(on) of 6 Ohm at 500mA, 10V, with a gate charge of 5 nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 100 pF at 25V. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.8W. This component finds application in power supply units and industrial automation.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | PG-SOT223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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