SPI80N03S2L-04
MOSFET N-CH 30V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPI80N03S2L-04 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 188W (Tc). The low on-resistance (Rds On) of 4.2mOhm at 80A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. It operates with a gate drive voltage range of 4.5V to 10V and has a maximum gate charge (Qg) of 105 nC at 10V. The input capacitance (Ciss) is 3900 pF at 25V. Packaged in a TO-262-3 (PG-TO262-3-1) with long leads, this device is suitable for through-hole mounting and operates across a wide temperature range from -55°C to 175°C (TJ). Applications for this MOSFET include power management in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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