SPI47N10
MOSFET N-CH 100V 47A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number SPI47N10, offers a 100V drain-source voltage and a continuous drain current of 47A at 25°C. This device features a low on-resistance of 33mOhm maximum at 33A, 10V. With 175W maximum power dissipation at the case, and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The SPI47N10 utilizes a robust N-Channel MOSFET technology, presented in a PG-TO262-3-1 package for through-hole mounting. Key electrical parameters include a gate charge of 105 nC maximum at 10V and input capacitance of 2500 pF maximum at 25V. This component is widely employed in industrial and automotive power conversion systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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