SPI42N03S2L-13
MOSFET N-CH 30V 42A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ SPI42N03S2L-13 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C, with a maximum power dissipation of 83W. The device exhibits a low on-resistance (Rds On) of 12.9 mOhm at 21A and 10V, facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 30.5 nC at 10V and input capacitance (Ciss) of 1130 pF at 25V. It is packaged in a PG-TO262-3-1 (TO-262-3 Long Leads) for through-hole mounting. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for applications in automotive, industrial power supplies, and DC-DC converters.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 37µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
