SPI21N10
MOSFET N-CH 100V 21A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel MOSFET, part number SPI21N10, offers a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C. This device features a maximum on-resistance (Rds On) of 80mOhm at 15A and 10V. With a maximum power dissipation of 90W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 38.4 nC at 10V and input capacitance (Ciss) of 865 pF at 25V. The SPI21N10 is housed in a PG-TO262-3-1 package, designed for through-hole mounting, and operates across a temperature range of -55°C to 175°C. This component finds application in power supply, motor control, and industrial power systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 44µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 25 V |
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