SPI20N60C3XKSA1
MOSFET N-CH 650V 20.7A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPI20N60C3XKSA1 is a 650V N-Channel Power MOSFET. This device features a low on-resistance of 190mOhm at 13.1A and 10V Vgs, with a continuous drain current of 20.7A at 25°C. The SPI20N60C3XKSA1 offers a maximum continuous power dissipation of 208W at 25°C and a gate charge of 114 nC at 10V. It is packaged in a TO-262-3 Through Hole configuration, specifically the PG-TO262-3-1 variant. This MOSFET is suitable for applications requiring high voltage and efficient switching, including power supply units and industrial motor control. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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