SPI16N50C3HKSA1
MOSFET N-CH 560V 16A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPI16N50C3HKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a 560V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 16A at 25°C (Tc). The device offers a low on-resistance of 280mOhm maximum at 10A and 10V gate-source voltage. With a maximum power dissipation of 160W (Tc), it is designed for demanding applications. The SPI16N50C3HKSA1 utilizes a through-hole mounting type in a PG-TO262-3-1 package, commonly known as TO-262-3 Long Leads. Key electrical parameters include a gate charge (Qg) of 66nC maximum at 10V and an input capacitance (Ciss) of 1600pF maximum at 25V. This MOSFET is suitable for use in power factor correction (PFC), switch mode power supplies (SMPS), and industrial power applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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