SPI15N60CFDHKSA1
MOSFET N-CH 650V 13.4A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPI15N60CFDHKSA1, an N-Channel CoolMOS™ Power MOSFET. This device features a 650V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 13.4A at 25°C. The SPI15N60CFDHKSA1 offers a maximum on-resistance (Rds On) of 330mOhm at 9.4A and 10V gate-source voltage. With a maximum power dissipation of 156W at 25°C (Tc), this MOSFET is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 84 nC (Max) at 10V and input capacitance (Ciss) of 1820 pF (Max) at 25V. The component is housed in a PG-TO262-3-1 package, a TO-262-3 Long Leads configuration, designed for through-hole mounting. This MOSFET is utilized in power supply units, lighting, and industrial applications. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 750µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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