SPI15N60C3HKSA1
MOSFET N-CH 650V 15A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPI15N60C3HKSA1 is a 650 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 280 mOhms (max) at 9.4A and 10V Vgs, with a continuous drain current capability of 15A at 25°C. The SPI15N60C3HKSA1 offers a maximum power dissipation of 156W at 25°C and a gate charge (Qg) of 63 nC (max) at 10V. Its input capacitance (Ciss) is 1660 pF (max) at 25V. The MOSFET is housed in a PG-TO262-3-1 package, facilitating through-hole mounting. This component is suitable for use in power supply units, lighting, and industrial applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
