SPI11N60CFDHKSA1
MOSFET N-CH 650V 11A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPI11N60CFDHKSA1 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 650 V. It offers a continuous drain current (Id) of 11 A at 25°C and a maximum power dissipation of 125 W at the same temperature. The device features a low on-resistance (Rds On) of 440 mOhm at 7 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 64 nC at 10 V and input capacitance (Ciss) of 1200 pF at 25 V. This through-hole component is housed in a PG-TO262-3-1 package, also known as TO-262-3 Long Leads, I2PAK, or TO-262AA. The SPI11N60CFDHKSA1 is suitable for applications in power factor correction (PFC), switched-mode power supplies (SMPS), and general-purpose high-voltage switching. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 500µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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