SPI10N10
MOSFET N-CH 100V 10.3A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPI10N10 is an N-channel power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 10.3A at a case temperature of 25°C, with a maximum power dissipation of 50W (Tc). The on-resistance (Rds On) is specified at 170mOhm maximum at 7.8A and 10V gate-source voltage, with a typical gate charge of 19.4 nC at 10V. Input capacitance (Ciss) is 426pF maximum at 25V. The SPI10N10 utilizes a through-hole mounting type within a PG-TO262-3-1 package. Operating temperature range is -55°C to 175°C. This device is well-suited for use in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V |
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