SPI100N03S2L03
MOSFET N-CH 30V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ SPI100N03S2L03 is an N-Channel Power MOSFET featuring a 30V drain-source voltage and a continuous drain current capability of 100A at 25°C. This device offers a low on-resistance of 3mOhm at 80A and 10V Vgs, with a maximum power dissipation of 300W at the case. The SPI100N03S2L03 utilizes advanced MOSFET technology, designed for high-efficiency power switching applications. Its PG-TO262-3-1 package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 8180 pF at 25V. Typical applications span automotive, industrial power supplies, and motor control systems. The operational temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
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