SPI07N65C3HKSA1
MOSFET N-CH 650V 7.3A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPI07N65C3HKSA1, offers a 650V drain-source voltage and 7.3A continuous drain current at 25°C. This device features a low on-resistance of 600mOhm maximum at 4.6A and 10V gate-source voltage, with a typical gate charge of 27 nC at 10V. The input capacitance (Ciss) is 790 pF maximum at 25V. Designed for through-hole mounting, it is housed in a PG-TO262-3-1 package, also known as TO-262-3 Long Leads. With a maximum power dissipation of 83W at the case temperature, this MOSFET operates across a wide temperature range of -55°C to 150°C. Applications include power factor correction, switch mode power supplies, and general purpose power switching in industrial and consumer electronics.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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