SPI07N60C3XKSA1
MOSFET N-CH 600V 7.3A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPI07N60C3XKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 7.3A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 600mOhm at 4.6A and 10V gate drive. With a Gate Charge (Qg) of 27 nC at 10V and Input Capacitance (Ciss) of 790 pF at 25V, it is designed for efficient power switching applications. The maximum power dissipation is 83W (Tc). This through-hole component is housed in a PG-TO262-3-1 package, also known as TO-262-3 Long Leads. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
