SPD50P03LGXT
MOSFET P-CH 30V 50A TO252-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS®-P series P-Channel MOSFET, part number SPD50P03LGXT. This surface mount device features a 30V drain-source voltage and a continuous drain current of 50A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The SPD50P03LGXT offers a low on-resistance of 7mOhm at 50A and 10V. Key parameters include a gate charge of 126 nC at 10V and input capacitance of 6880 pF at 25V. Designed for operation across a wide temperature range of -55°C to 175°C (TJ), it is supplied in a PG-TO252-5 package, commonly known as TO-252. This component is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: OptiMOS®-PRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO252-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6880 pF @ 25 V |
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