SPD50N03S2L-06
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ series SPD50N03S2L-06 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 50A at a case temperature of 25°C. The low on-resistance of 6.4mOhm at 50A and 10V Vgs ensures minimal conduction losses. With a gate charge of 68 nC, it supports fast switching speeds. The SPD50N03S2L-06 is housed in a PG-TO252-3-11 (DPAK) package, suitable for surface mounting, and offers a maximum power dissipation of 136W at the case. It operates across a wide temperature range from -55°C to 175°C. This component finds utility in sectors such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530 pF @ 25 V |
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