SPD50N03S207GBTMA1
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPD50N03S207GBTMA1 is an N-Channel power MOSFET designed for high-performance applications. This component features a 30V drain-source voltage and a continuous drain current capability of 50A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance of 7.3mOhm at 50A and 10V gate drive voltage, coupled with a gate charge of 46.5 nC, ensures efficient switching performance.
The SPD50N03S207GBTMA1 utilizes advanced MOSFET technology and is housed in a PG-TO252-3 (DPAK) surface-mount package, making it suitable for automated assembly processes. Its operating temperature range of -55°C to 175°C (TJ) and a maximum gate-source voltage of ±20V provide robustness. This device is commonly found in automotive, industrial power supply, and power management systems requiring compact and efficient power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 25 V |
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